Atomic scale studies of epitaxial growth processes using X-ray techniques
- D.W. Kisker
- G.B. Stephenson
- et al.
- 1996
- Journal of Crystal Growth
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232 results for Jerry Tersoff
Stress-induced roughening in epitaxial growth
- 1996
- Applied Surface Science
Relaxation mechanism of Ge islands/Si(001) at low temperature
- F. Legoues
- J. Tersoff
- et al.
- 1995
- Applied Physics Letters
Nucleation of dislocations in SiGe layers grown on (001)Si
- P.M. Mooney
- F.K. LeGoues
- et al.
- 1994
- Journal of Applied Physics
Facet formation in strained Si1-x Gex films
- M.A. Lutz
- R.M. Feenstra
- et al.
- 1994
- Surface Science
Chemical order in amorphous silicon carbide
- 1994
- Physical Review B
Calculation of temperature effects on the equilibrium crystal shape of Si near (100)
- S. Mukherjee
- E. Pehlke
- et al.
- 1994
- Physical Review B
Dislocations and strain relief in compositionally graded layers
- 1993
- Applied Physics Letters
Heterojunction band lineups in Si-Ge alloys using spatially resolved electron-energy-loss spectroscopy
- J.F. Morar
- P.E. Batson
- et al.
- 1993
- Physical Review B
Equilibrium crystal shape of silicon near (001)
- J. Tersoff
- E. Pehlke
- 1993
- Physical Review B