Double spin-torque magnetic tunnel junction devices for last-level cache applications
- G. Hu
- C. Safranski
- et al.
- 2022
- IEDM 2022
Conference paper
Publications
26 results for E. Galligan
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions
- C. Safranski
- G. Hu
- et al.
- 2022
- VLSI Technology and Circuits 2022
Conference paperReliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
- Christopher Safranski
- Guohan Hu
- et al.
- 2021
- IEEE T-ED
PaperMaterials and devices for reduced switching field toggle magnetic random access memory
- D.C. Worledge
- P.L. Trouilloud
- et al.
- 2006
- Journal of Applied Physics
PaperRecent advances in MRAM technology
- W.J. Gallagher
- D.W. Abraham
- et al.
- 2005
- VLSI Technology 2005
Conference paperA 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications
- A.R. Sitaram
- D.W. Abraham
- et al.
- 2003
- VLSI Technology 2003
Conference paperIon beam alignment for liquid crystal display fabrication
- J. Doyle
- P. Chaudhari
- et al.
- 2003
- Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Conference paperIn‐plane solvent diffusion in a photosensitive polyimide
- Da‐Yuan Shih
- Sharon Nunes
- et al.
- 2003
- Journal of Applied Polymer Science
PaperAtomic-beam alignment of inorganic materials for liquid-crystal displays
- P. Chaudhari
- James Lacey
- et al.
- 2001
- Nature
Paper16.3″ QSXGA high resolution wide viewing angle TFT-LCDs based on ridge and fringe-field structures
- Alan Lien
- C. Cai
- et al.
- 2001
- Displays
Paper