FinFET resistance mitigation through design and process optimization
- Cindy Wang
- Josephine Chang
- et al.
- 2009
- VLSI-TSA 2009
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65 results for Michael Guillorn
Reduction of random telegraph noise in high-κ / metal-gate stacks for 22 nm generation FETs
- N. Tega
- H. Miki
- et al.
- 2009
- IEDM 2009
Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009
Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- H. Kawasaki
- M. Khater
- et al.
- 2008
- IEDM 2008
FinFET performance advantage at 22nm: An AC perspective
- M. Guillorn
- J. Chang
- et al.
- 2008
- VLSI Technology 2008