Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions
- D.C. Worledge
- G. Hu
- et al.
- 2011
- Applied Physics Letters
Paper
Publications
20 results for M.C. Gaidis
Switching distributions and write reliability of perpendicular spin torque MRAM
- D.C. Worledge
- G. Hu
- et al.
- 2010
- IEDM 2010
Conference paperA three-terminal spin-torque-driven magnetic switch
- J.Z. Sun
- M.C. Gaidis
- et al.
- 2009
- Applied Physics Letters
PaperField and bias dependence of high-frequency magnetic noise in MgO-based magnetic tunnel junctions
- Y. Guan
- D.W. Abraham
- et al.
- 2009
- Journal of Applied Physics
PaperHigh-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions
- J.Z. Sun
- M.C. Gaidis
- et al.
- 2009
- Journal of Applied Physics
PaperA statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
- R. Beach
- T. Min
- et al.
- 2008
- IEDM 2008
Conference paperMaterials and devices for reduced switching field toggle magnetic random access memory
- D.C. Worledge
- P.L. Trouilloud
- et al.
- 2006
- Journal of Applied Physics
PaperTwo-level BEOL processing for rapid iteration in MRAM development
- Michael C. Gaidis
- Eugene J. O'Sullivan
- et al.
- 2006
- IBM J. Res. Dev
PaperRecent advances in MRAM technology
- W.J. Gallagher
- D.W. Abraham
- et al.
- 2005
- VLSI Technology 2005
Conference paperA 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications
- A.R. Sitaram
- D.W. Abraham
- et al.
- 2003
- VLSI Technology 2003
Conference paper