Publications

9 results for Ryan M. Martin

High-performance CMOS-compatible self-aligned In_0.53Ga_0.47As MOSFETs with GMSAT over 2200 μs/μm at V_DD = 0.5 v
- - Yanning Sun
  - Amlan Majumdar
  - et al.
- 2014
- IEDM 2014
CMOS-Compatible self-aligned In_0.53Ga_0.47As MOSFETs with gate lengths down to 30 nm
- - Amlan Majumdar
  - Yanning Sun
  - et al.
- 2014
- IEEE T-ED
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- - Y. Sun
  - A. Majumdar
  - et al.
- 2013
- IEDM 2013
Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. the effect of oxygen addition
- - Cheng-Che Hsu
  - Nathan Marchack
  - et al.
- 2013
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Highly selective silicon nitride etching to Si and SiO₂ for a gate sidewall spacer using a CF₃I/O₂/H₂ neutral beam
- - Daiki Nakayama
  - Akira Wada
  - et al.
- 2013
- Journal of Physics D: Applied Physics
Patterning of CMOS device structures for 40-80nm pitches and beyond
- - Sebastian U. Engelmann
  - R.M. Martin
  - et al.
- 2012
- SPIE Advanced Lithography 2012
Plasma etching of Hf-based high- k thin films. Part I. Effect of complex ions and radicals on the surface reactions
- - Ryan M. Martin
  - Jane P. Chang
- 2009
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Plasma etching of Hf-based high- k thin films. Part II. Ion-enhanced surface reaction mechanisms
- - Ryan M. Martin
  - Hans-Olof Blom
  - et al.
- 2009
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Plasma etching of Hf-based high- k thin films. Part III. Modeling the reaction mechanisms
- - Ryan M. Martin
  - Jane P. Chang
- 2009
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films