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Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technologyHaizhou YinM. Hamaguchiet al.2008VLSI-TSA 2008
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyondHaizhou YinC.Y. Sunget al.2007VLSI Technology 2007
Direct silicon bonded (DSB) substrate solid phase epitaxy (SPE) integration scheme study for high performance bulk CMOSHaizhou YinC.Y. Sunget al.2006IEDM 2006
Stress proximity technique for performance improvement with dual stress liner at 45nm technology and beyondX. ChenS. Fanget al.2006VLSI Technology 2006
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithographyS. NarasimhaK. Onishiet al.2006IEDM 2006
Lower resistance scaled metal contacts to silicide for advanced CMOSA. TopolC. Sherawet al.2006VLSI Technology 2006
Dual stress liner enhancement in hybrid orientation technologyC. SherawM. Yanget al.2005VLSI Technology 2005