CMOS fabricated by hybrid-orientation technology (HOT)

Hybrid-orientation technology (HOT), a novel planar CMOS approach that fabricates NMOS on (100) silicon surface and PMOS on (110) silicon surface to take advantage of the highest carrier mobilities on these surfaces, is reviewed. HOT module process flow, defects formed during the HOT module, HOT CMOS performance enhancement and its layout dependence, as well as the high R ext issue for (110) PMOS are discussed in this paper. ©2007 IEEE.