Stoichiometry reversal in the growth of thin oxynitride films on Si(100) surfaces
- D.G.J. Sutherland
- H. Akatsu
- et al.
- 1995
- Journal of Applied Physics
Paper
Publications
150 results for Matthew Copel
Surfactants in Si(111) homoepitaxy
- M. Horn-Von Hoegen
- J. Falta
- et al.
- 1995
- Applied Physics Letters
PaperRelaxation and H coverage of ammonium fluoride treated Si(111)
- M. Copel
- R.J. Culbertson
- et al.
- 1994
- Applied Physics Letters
PaperNucleation of Co silicide on H passivated Si(111)
- M. Copel
- R.M. Tromp
- 1994
- Applied Physics Letters
PaperRoughness analysis of Si1-xGex films
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1994
- MRS Fall Meeting 1994
Conference paperSurfactant-mediated growth of Ge on Si(111)
- M. Horn-Von Hoegen
- M. Copel
- et al.
- 1994
- Physical Review B
PaperSymmetry, structure, and step induced ordering of the Si(001)-(2 × 3)Ag surface
- Thomas Michely
- Mark C. Reuter
- et al.
- 1994
- Physical Review Letters
PaperInterstitial precursor to silicide formation on Si(111)-(7×7)
- P.A. Bennett
- David G. Cahill
- et al.
- 1994
- Physical Review Letters
PaperH coverage dependence of Si(001) homoepitaxy
- M. Copel
- R.M. Tromp
- 1994
- Physical Review Letters
PaperElastic recoil detection for medium-energy ion scattering
- M. Copel
- R.M. Tromp
- 1993
- Review of Scientific Instruments
Paper