Aluminum mobility and interfacial segregation in fully silicided gate contacts
- R.P. Pezzi
- M. Copel
- et al.
- 2005
- Applied Physics Letters
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150 results for Matthew Copel
Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures
- Daeyoung Lim
- Richard Haight
- et al.
- 2005
- Applied Physics Letters
Interfacial segregation of dopants in fully silicided metal-oxide- semiconductor gates
- M. Copel
- R.P. Pezzi
- et al.
- 2005
- Applied Physics Letters
Interfacial oxide formation from intrinsic oxygen in W-HfO2 gated silicon field-effect transistors
- E.J. Preisler
- S. Guha
- et al.
- 2004
- Applied Physics Letters
Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)
- A. Portavoce
- M. Kammler
- et al.
- 2004
- Physical Review B - CMMP
Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge
- James Jer-Hueih Chen
- Nestor A. Bojarczuk Jr.
- et al.
- 2004
- IEEE Transactions on Electron Devices
Interlayer composition of HfO 2/Si(001) films
- M. Copel
- M.C. Reuter
- et al.
- 2004
- Applied Physics Letters
Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
- L.F. Edge
- D.G. Schlom
- et al.
- 2004
- Applied Physics Letters
The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
- H. Kim
- C. Lavoie
- et al.
- 2004
- Journal of Applied Physics
Epitaxial silicon and germanium on buried insulator heterostructures and devices
- N.A. Bojarczuk
- M. Copel
- et al.
- 2003
- Applied Physics Letters