Room-temperature electron trapping in Al0.35Ga 0.65As/GaAs modulation-doped field-effect transistors
- Marshall I. Nathan
- P.M. Mooney
- et al.
- 1985
- Applied Physics Letters
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164 results for Paul Solomon
Resonant Fowler-Nordheim tunneling in n-GaAs-undoped Al xGa1-xAs-n+GaAs capacitors
- T.W. Hickmott
- P. Solomon
- et al.
- 1984
- Applied Physics Letters
Sequential single-phonon emission in GaAs-AlxGa1-xAs tunnel junctions
- T.W. Hickmott
- P. Solomon
- et al.
- 1984
- Physical Review Letters
IIA-7 A GaAs Gate Heterojunction FET-
- P. Solomon
- C.M. Knoedler
- et al.
- 1984
- IEEE T-ED
Modulation-Doped GaAs/AlGaAs Heterojunction Field-Effect Transistors (MODFET's), Ultrahigh-Speed Device for Supercomputers
- Paul M. Solomon
- Hadis Morkoç
- 1984
- IEEE T-ED
A GaAs Gate Heterojunction FET
- P. Solomon
- C.M. Knoedler
- et al.
- 1984
- IEEE Electron Device Letters
Electrical measurements on n+-GaAs-undoped Ga 0.6Al0.4 As-n-GaAs capacitors
- P. Solomon
- T.W. Hickmott
- et al.
- 1983
- Applied Physics Letters
Effects of Collector Epitaxial Layer on the Switching Speed of High-Performance Bipolar Transistors
- D.D. Tang
- P. Solomon
- et al.
- 1983
- IEEE Electron Device Letters
Correction to “A Comparison of semiconductor Devices for High-speed Logic”
- Paul M. Solomon
- 1982
- Proceedings of the IEEE
1.25 μm Deep-Groove-lsolated Self-Aligned Bipolar Circuits
- Denny D. Tang
- Paul M. Solomon
- et al.
- 1982
- IEEE Journal of Solid-State Circuits