Resonant Fowler-Nordheim tunneling in n-GaAs-undoped Al xGa1-xAs-n+GaAs capacitors

T.W. Hickmott; P. Solomon; R. Fischer; H. Morkoç

doi:10.1063/1.94564

Applied Physics Letters

Paper

01 Dec 1984

Resonant Fowler-Nordheim tunneling in n^-GaAs-undoped Al _xGa_1-xAs-n⁺GaAs capacitors

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Abstract

Periodic structure is observed in the current-voltage characteristics at 4.2 K of n-GaAs-AlxGa1-xAs-n+GaAs capacitors, grown by molecular beam epitaxy, which have AlxGa 1-xAs thicknesses of 30-35 nm. The periodicities can be explained quantitatively by the theory of resonant Fowler-Nordheim tunneling.

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Adaptive wiring for 20 nm scale epitaxial silicon Ohmic contacts to silicon nanowires

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