Low resistance ohmic contacts to two-dimensional electron-gas structures by selective MOVPE
- P. Solomon
- A. Palevski
- et al.
- 1989
- IEDM 1989
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164 results for Paul Solomon
S-parameter characterization of GaAs gate SISFETs at liquid nitrogen temperatures
- Y. Kwark
- P. Solomon
- et al.
- 1989
- IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1989
New phenomena in coupled transport between 2D and 3D electron-gas layers
- P. Solomon
- P.J. Price
- et al.
- 1989
- Physical Review Letters
The need for low resistance interconnects in future high-speed systems
- P. Solomon
- 1988
- SPIE Advances in Semiconductors and Superconductors 1988
Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures
- H. Baratte
- T.N. Jackson
- et al.
- 1987
- Applied Physics Letters
IIA-2 Saturable Charge FET
- P. Solomon
- D.J. Frank
- et al.
- 1987
- IEEE T-ED
Depletion-Mode GaAs SISFET's By Selective Ion Implantation
- H. Baratte
- Paul M. Solomon
- et al.
- 1987
- IEEE Electron Device Letters
Determination of the conduction-band discontinuity between in 0.53ga0.47as/in0.52al0.48as using n+-ingaas/inalas/n--ingaas capacitors
- C.K. Peng
- A. Ketterson
- et al.
- 1986
- Journal of Applied Physics
Effect of the silicon doping concentration on the recombination kinetics of DX centers in Al0.35Ga0.65As
- N. Caswell
- P.M. Mooney
- et al.
- 1986
- Applied Physics Letters
Probe pressure effect on tunneling current through a GaAs-(Al,Ga)As-GaAs heterojunction barrier
- P. Solomon
- S.L. Wright
- et al.
- 1986
- Applied Physics Letters