Technology for the fabrication of ultrashort channel metal–oxide–semiconductor field-effect transistors
- J. Knoch
- J. Appenzeller
- et al.
- 2001
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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164 results for Paul Solomon
Preparation of 200 mm silicon substrates with metal ground-plane for double-gate SOI devices
- L.J. Huang
- K.K. Chan
- et al.
- 2000
- IEEE International SOI Conference 2000
Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors
- J. Appenzeller
- R. Martel
- et al.
- 2000
- Applied Physics Letters
Ultrathin 600°C wet thermal silicon dioxide
- J. Appenzeller
- J.A. Del Alamo
- et al.
- 2000
- Electrochemical and Solid-State Letters
Device innovation and material challenges at the limits of CMOS technology
- P. Solomon
- 2000
- Annual Review of Materials Science
Characterization of the silicon on insulator film in bonded wafers by high resolution X-ray diffraction
- G.M. Cohen
- P.M. Mooney
- et al.
- 1999
- Applied Physics Letters
Nanoscale CMOS
- Hon-Sum Philip Wong
- David J. Frank
- et al.
- 1999
- Proceedings of the IEEE
CMOS and memories: From 100 nm to 10 nm!
- Sandip Tiwari
- Paul M. Solomon
- et al.
- 1999
- Microelectronic Engineering
Bonding of thin films on 200 mm silicon wafers using chemical mechanical polishing
- E.C. Jones
- S. Tiwari
- et al.
- 1998
- IEEE International SOI Conference 1998
Straddle-gate transistor: Changing MOSFET channel length between off- and on-state towards achieving tunneling-defined limit of field-effect
- S. Tiwari
- J.J. Welser
- et al.
- 1998
- IEDM 1998