Publications

173 results for Geoffrey W. Burr

Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge₂Sb₂Te₅ and AgInSbTe
- - Bong-Sub Lee
  - Robert M. Shelby
  - et al.
- 2014
- Journal of Applied Physics
Recovery dynamics and fast (sub-50ns) read operation with Access Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC)
- - G.W. Burr
  - K. Virwani
  - et al.
- 2013
- VLSI Technology 2013
Nanoscale electronic synapses using phase change devices
- - Bryan L. Jackson
  - Bipin Rajendran
  - et al.
- 2013
- ACM JETC
Optical horn antennas for efficiently transferring photons from a quantum emitter to a single-mode optical fiber
- - T. Grosjean
  - M. Mivelle
  - et al.
- 2013
- Optics Express
Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials
- - K. Virwani
  - G.W. Burr
  - et al.
- 2012
- IEDM 2012
Large-scale (512kbit) integration of multilayer-ready access-devices based on Mixed-Ionic-Electronic-Conduction (MIEC) at 100% yield
- - G.W. Burr
  - K. Virwani
  - et al.
- 2012
- VLSI Technology 2012
Observation and modeling of polycrystalline grain formation in Ge ₂Sb ₂Te ₅
- - Geoffrey W. Burr
  - Pierre Tchoulfian
  - et al.
- 2012
- Journal of Applied Physics
Near-field probing of slow Bloch modes on photonic crystals with a nanoantenna
- - T.-P. Vo
  - M. Mivelle
  - et al.
- 2012
- Optics Express
Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials
- - R.S. Shenoy
  - K. Gopalakrishnan
  - et al.
- 2011
- VLSI Technology 2011
Voltage polarity effects in Ge₂Sb₂Te ₅-based phase change memory devices
- - Alvaro Padilla
  - Geoffrey W. Burr
  - et al.
- 2011
- Journal of Applied Physics