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Micro and Nano Engineering
Review
Access devices for 3D crosspoint memory
Abstract
The emergence of new nonvolatile memory (NVM) technologies - such as phase change memory, resistive, and spin-torque-transfer magnetic RAM - has been motivated by exciting applications such as storage class memory, embedded nonvolatile memory, enhanced solid-state disks, and neuromorphic computing. Many of these applications call for such NVM devices to be packed densely in vast ".
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