Publications

23 results for Emanuele Uccelli

Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al₂O₃ gate dielectric and H₂/Ar anneal
- - V. Djara
  - Lukas Czornomaz
  - et al.
- 2016
- Solid-State Electronics
Hybrid III-V/SiGe technology: Improved n-FET performance and CMOS inverter characteristics
- - Lukas Czornomaz
  - Nicolas Daix
  - et al.
- 2014
- SNW 2014
Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(0 0 1)
- - Kristy J. Kormondy
  - Stefan Abel
  - et al.
- 2015
- Microelectronic Engineering
Electrical characterisation of InGaAs on insulator structures
- - K. Cherkaoui
  - Y.Y. Gomeniuk
  - et al.
- 2015
- Microelectronic Engineering
Low D_it HfO₂/Al₂O₃/In_0.53Ga_0.47As gate stack achieved with plasma-enhanced atomic layer deposition
- - V. Djara
  - Marilyne Sousa
  - et al.
- 2015
- Microelectronic Engineering
An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
- - V. Djara
  - Veeresh Deshpande
  - et al.
- 2015
- VLSI Technology 2015
Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates
- - Lukas Czornomaz
  - Emanuele Uccelli
  - et al.
- 2015
- VLSI Technology 2015
Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
- - D. Cutaia
  - Kirsten E. Moselund
  - et al.
- 2015
- IEEE J-EDS
Tri-gate In_0.53Ga_0.47As-on-insulator junctionless field effect transistors
- - V. Djara
  - Lukas Czornomaz
  - et al.
- 2015
- EUROSOI-ULIS 2015
Fabrication and analysis of vertical p-type InAs-Si nanowire tunnel FETs
- - D. Cutaia
  - Kirsten E. Moselund
  - et al.
- 2015
- EUROSOI-ULIS 2015