Publications

32 results for Ruqiang Bao

High Performance Nanosheet Technology Optimized for 77 K
- - R. Bao
  - L. Qin
  - et al.
- 2023
- IEDM 2023
SiGe Gate-All-around Nanosheet Reliability
- - Huimei Zhou
  - Miaomiao Wang
  - et al.
- 2022
- IRPS 2022
Critical Elements for Next Generation High Performance Computing Nanosheet Technology
- - R. Bao
  - C. Durfee
  - et al.
- 2021
- IEDM 2021
Enabling Next Generation CMOS by Novel EOT Scaling Module
- - Lin Dong
  - Steven Hung
  - et al.
- 2021
- VLSI Technology 2021
Challenges and Opportunities for Stacked Transistor: DTCO and Device
- - J. Wang
  - S.D. Suk
  - et al.
- 2021
- VLSI Technology 2021
TDDB Reliability in Gate-All-Around Nanosheet
- - Huimei Zhou
  - Miaomiao Wang
  - et al.
- 2021
- IRPS 2021
Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies
- - Ruqiang Bao
  - K. Watanabe
  - et al.
- 2020
- VLSI Technology 2020
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
- - Huimei Zhou
  - Miaomiao Wang
  - et al.
- 2020
- IRPS 2020
Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications
- - Ruqiang Bao
  - Reinaldo A. Vega
  - et al.
- 2019
- IEDM 2019
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
- - J. Zhang
  - S. Pancharatnam
  - et al.
- 2019
- IEDM 2019