GaAs c(4×4) surface structure in organometallic vapor-phase epitaxy
- A.P. Payne
- P.H. Fuoss
- et al.
- 1994
- Physical Review B
Paper
Publications
16 results for Paul H. Fuoss
X-ray-scattering analysis of surface structures produced by vapor-phase epitaxy of GaAs
- F.J. Lamelas
- P.H. Fuoss
- et al.
- 1994
- Physical Review B
PaperGallium arsenide surface reconstructions during organometallic vapor-phase epitaxy
- F.J. Lamelas
- P.H. Fuoss
- et al.
- 1992
- Applied Physics Letters
PaperTime-resolved x-ray scattering studies of layer-by-layer epitaxial growth
- P.H. Fuoss
- D.W. Kisker
- et al.
- 1992
- Physical Review Letters
PaperAtomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering
- D.W. Kisker
- G.B. Stephenson
- et al.
- 1992
- Journal of Crystal Growth
PaperThe Si(001)/SiO2 interface
- A. Ourmazd
- P.H. Fuoss
- et al.
- 1990
- Applied Surface Science
Paper