Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
The atomic structure of Si(001)/SiO2 interfaces, produced by the oxidation of initially smooth Si surfaces, is discussed. Soft X-ray spectroscopy shows the detailed interfacial atomic configuration to depend sensitively on the preparation conditions. © 1989.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
J.C. Marinace
JES
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids