Publications

18 results for Rajan K. Pandey

First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance
- - H. Dixit
  - Chengyu Niu
  - et al.
- 2017
- IEEE T-ED
Interface engineering of Si_1-xGe_x gate stacks for high performance dual channel CMOS
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2017
- ASICON 2017
Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO₂/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
- - Shahab Siddiqui
  - Min Dai
  - et al.
- 2017
- JVSTB
Process optimizations for NBTI/PBTI for future replacement metal gate technologies
- - Barry P. Linder
  - A. Dasgupta
  - et al.
- 2016
- IRPS 2016
Selective GeO_x-scavenging from interfacial layer on Si_1-xGe_x channel for high mobility Si/Si_1-xGe_x CMOS application
- - Choonghyun Lee
  - H. Kim
  - et al.
- 2016
- VLSI Technology 2016
Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- - Takashi Ando
  - Tenko Yamashita
  - et al.
- 2015
- IEDM 2015
Carrier transport in high mobility InAs nanowire junctionless transistors
- - Aniruddha Konar
  - John Mathew
  - et al.
- 2015
- Nano Letters
On the origin of steep i - V nonlinearity in mixed-ionic-electronic-conduction-based access devices
- - Alvaro Padilla
  - Geoffrey W. Burr
  - et al.
- 2015
- IEEE T-ED
Nitrogen diffusion in hafnia and the impact of nitridation on oxygen and hydrogen diffusion: A first-principles study
- - Rajesh Sathiyanarayanan
  - Rajan K. Pandey
  - et al.
- 2015
- Journal of Applied Physics
The origin of massive nonlinearity in Mixed-Ionic-Electronic-Conduction (MIEC)-based Access Devices, as revealed by numerical device simulation
- - Alvaro Padilla
  - Geoffrey W. Burr
  - et al.
- 2014
- DRC 2014