A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology
- U. Kwon
- K. Wong
- et al.
- 2012
- VLSI Technology 2012
Publications
74 results for Vamsi Paruchuri
Strained high percentage (60%) boron doped silicon-germanium alloys - Strain, dopant substitionality, carrier concentration, resistivity, and microstructure development
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ISTDM 2012
Effect of germanium concentration on the dielectric function of strained Si 1-xGe x films
- Manasa Medikonda
- Gangadhara R. Muthinti
- et al.
- 2012
- ISTDM 2012
Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing
- Hiroshi Itokawa
- Nathaniel C. Beriiner
- et al.
- 2012
- IWJT 2012
Electron mobility limited by remote charge scattering in thin (100)- and (110)-oriented silicon body double-gated metal-oxide-semiconductor field-effect transistors with high-k gate dielectrics
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2012
- Japanese Journal of Applied Physics
Effect of thermal annealing on carbon in in-situ phosphorous-doped Si 1-xC x films
- Thomas Adam
- Nicolas Loubet
- et al.
- 2012
- Thin Solid Films
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011