Publications

51 results for Amlan Majumdar

CMOS-Compatible self-aligned In_0.53Ga_0.47As MOSFETs with gate lengths down to 30 nm
- - Amlan Majumdar
  - Yanning Sun
  - et al.
- 2014
- IEEE T-ED
Strained Si_1-xGe_x-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- VLSI Technology 2014
Contamination mitigation of hydrogen silsesquioxane resist processed with Na⁺-containing developer for nanoscale CMOS device patterning
- - Markus Brink
  - Isaac Lauer
  - et al.
- 2014
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Analysis of carrier transport in short-channel MOSFETs
- - Amlan Majumdar
  - Dimitri A. Antoniadis
- 2014
- IEEE T-ED
Semiconductor capacitance penalty per gate in single- and double-gate FETs
- - Amlan Majumdar
- 2014
- IEEE Electron Device Letters
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
- - Sarunya Bangsaruntip
  - K. Balakrishnan
  - et al.
- 2013
- IEDM 2013
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- - Y. Sun
  - A. Majumdar
  - et al.
- 2013
- IEDM 2013
High-performance Si_1-xGe_x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- - P. Hashemi
  - M. Kobayashi
  - et al.
- 2013
- VLSI Circuits 2013
High-performance Si_1-xGe_x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- - P. Hashemi
  - M. Kobayashi
  - et al.
- 2013
- VLSI Technology 2013
Corrections to "on the ballistic injection velocity in deeply scaled MOSFETs"
- - Yang Liu
  - Mathieu Luisier
  - et al.
- 2012
- IEEE T-ED