CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
Paper
Publications
51 results for Amlan Majumdar
Strained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- VLSI Technology 2014
Conference paperContamination mitigation of hydrogen silsesquioxane resist processed with Na+-containing developer for nanoscale CMOS device patterning
- Markus Brink
- Isaac Lauer
- et al.
- 2014
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
PaperSemiconductor capacitance penalty per gate in single- and double-gate FETs
- Amlan Majumdar
- 2014
- IEEE Electron Device Letters
PaperAnalysis of carrier transport in short-channel MOSFETs
- Amlan Majumdar
- Dimitri A. Antoniadis
- 2014
- IEEE T-ED
PaperDensity scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
- Sarunya Bangsaruntip
- K. Balakrishnan
- et al.
- 2013
- IEDM 2013
Conference paperSelf-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Conference paperHigh-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Circuits 2013
Conference paperHigh-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Technology 2013
Conference paperCorrections to "on the ballistic injection velocity in deeply scaled MOSFETs"
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
Paper