Submicron CMOS circuit simulation model accurate from liquid nitrogen to room temperature
- H.I. Hanafi
- T.J. Buccelot
- et al.
- 1989
- ESSDERC 1989
Conference paper
Publications
68 results for Phillip Restle
A 3.5-ns/77 K and 6.2-ns/300 K 64K CMOS RAM with ECL Interfaces
- Terry I. Chappell
- Stanley E. Schuster
- et al.
- 1989
- IEEE Journal of Solid-State Circuits
Paper6.2 ns 64Kb CMOS RAM with ECL interfaces
- T.I. Chappell
- S.E. Schuster
- et al.
- 1988
- VLSI Circuits 1988
Conference paper3.5ns CMOS 64K ECL RAM at 77°K
- S.E. Schuster
- T.I. Chappell
- et al.
- 1988
- VLSI Circuits 1988
Conference paperA high performance liquid-nitrogen CMOS SRAM technology
- J.Y.-C. Sun
- S. Klepner
- et al.
- 1988
- ESSDERC 1988
Conference paperFast CMOS ECL Receivers with 100-mV Worst-Case Sensitivity
- Barbara A. Chappell
- Terry I. Chappell
- et al.
- 1988
- IEEE Journal of Solid-State Circuits
PaperIndividual oxide traps as probes into submicron devices
- Phillip Restle
- 1988
- Applied Physics Letters
PaperDesign and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters
Paper