Improved manufacturability of Cu bond pads and implementation of seal design in 3D integrated circuits and packages
- K.N. Chen
- C. Tsang
- et al.
- 2006
- VMIC 2006
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31 results for D.L. Rath
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Advanced chemical-mechanical planarization (CMP) for enabling silicon carrier integration with through-vias and fine pitch wiring
- Cornelia K. Tsang
- Donald F. Canaperi
- et al.
- 2006
- CMP-MIC 2006
Electromigration Cu mass flow in Cu interconnections
- C.-K. Hu
- D. Canaperi
- et al.
- 2006
- Thin Solid Films
Successful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration scheme
- S.V. Nitta
- S. Purushothaman
- et al.
- 2004
- IEDM 2004
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
A study of electromigration lifetime for Cu interconnects coated with CoWP, Ta/TaN, or SiC xN yH z
- C.-K. Hu
- D. Canaperi
- et al.
- 2003
- AMC 2003
Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps
- C.-K. Hu
- L. Gignac
- et al.
- 2003
- Applied Physics Letters
Enhancement of Semiconductor Wafer Cleaning by Chelating Agent Addition
- Glenn W. Gale
- David L. Rath
- et al.
- 2001
- JES