Metallization opportunities and challenges for future back-end-of-the-line technology
- Cyril Cabral Jr.
- Benjamin Fletcher
- et al.
- 2010
- ADMETA 2010
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143 results for Daniel Edelstein
Co capping layers for Cu/low-k interconnects
- C.-C. Yang
- P. Flaitz
- et al.
- 2010
- ADMETA 2010
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Copper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
Integration and reliability of CVD Ru Cap for Cu/Low-k development
- C.-C. Yang
- D. Edelstein
- et al.
- 2009
- IITC 2009