Temperature and field interrelation study of low-k TDDB for Cu interconnects with and without liner - New insights to the roles of Cu for a competing breakdown process
- Fen Chen
- Michael Shinosky
- et al.
- 2013
- IRPS 2013
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143 results for Daniel Edelstein
X-ray characterization of PEALD versus PVD tantalum nitride barrier deposition and the impact on via contact resistance
- Xunyuan Zhang
- Oscar Van der Straten
- et al.
- 2013
- ECS Transactions
Electrodeposited Cu film morphology on thin PVD Cu seed layers
- James J. Kelly
- X. Lin
- et al.
- 2013
- ECS Transactions
Experimental confirmation of electron fluence driven, Cu catalyzed interface breakdown model for low-k TDDB
- Fen Chen
- Jeffrey Gambino
- et al.
- 2012
- IRPS 2012
In-situ metal/dielectric capping process for electromigration enhancement in Cu interconnects
- Chih-Chao Yang
- Fen Chen
- et al.
- 2012
- IITC 2012
Effects of Al and Mn impurities on Cu electromigration
- C.-K. Hu
- J. Ohm
- et al.
- 2011
- ADMETA 2011
Reflow of copper on ruthenium
- C.-C. Yang
- Y. Loquet
- et al.
- 2011
- ADMETA 2011
Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices
- Son Nguyen
- T. Haigh
- et al.
- 2011
- ECS Meeting 2011
CVD Co capping layers for Cu/low-k interconnects: Cu em enhancement vs. Co thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IITC/MAM 2011
Effect of impurity on Cu electromigration
- C.-K. Hu
- Matthew Angyal
- et al.
- 2010
- International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010