A systematic study of temperature, polarity, thickness, and ramp rate dependencies of ramp-voltage stress for SiO2 and its comparison with 2D gate dielectrics
- Ernest Y Wu
- Richard G. Southwick
- et al.
- 2025
- IRPS 2025
Talk
Publications
6 results for Ernest Y Wu
Current Understanding and Future Challenges of Gate Dielectric Breakdown Reliability
- Ernest Y Wu
- 2024
- IEDM 2024
TutorialChallenges of gate stack TDDB in gate-all-around nanosheet towards further scaling
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2024
- IRPS 2024
Conference paperReversing a decades-long scaling law of dielectric breakdown for ReRAM forming voltage reduction - Modeling competition among defect generation and annihilation processes
- Ernest Y Wu
- Takashi Ando
- et al.
- 2023
- IEDM 2023
Invited talkSystematic multiple filament statistical methodology using a successive varying-voltage technique for series resistance effect in post-breakdown (forming) characterization
- Ernest Y Wu
- Baozhen Li
- et al.
- 2022
- IEDM 2022
TalkDevelopment of spatial nearest-neighbor analysis and Clustering/Gibbs statistical methodology for filament percolation in dielectric breakdown and forming process in ReRAM devices
- Ernest Y Wu
- Franco Stellari
- et al.
- 2021
- IEDM 2021
Conference paper