Cold (100°C) carbon co-implantation into high phosphorus doping source/drain extensions for aggressively scaled NFETs
- Koichi Yako
- Makoto Fujiwara
- et al.
- 2011
- IWJT 2011
Publications
Date
Featured collections
Popular topics
75 results for Huiming Bu
Opportunities and challenges of FinFET as a device structure candidate for 14nm node CMOS technology
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- CSTIC 2011
Ultra-thin Body and BOX (UTBB) device for aggressive scaling of CMOS technology
- Q. Liu
- A. Yagishita
- et al.
- 2011
- CSTIC 2011
Extremely thin SOI (ETSOI) technology: Past, present, and future
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2010
- IEEE International SOI Conference 2010
Hot-carrier degradation in undoped-body etsoi fets and soi finfets
- Miaomiao Wang
- Pranita Kulkarni
- et al.
- 2010
- IRPS 2010
Challenges and opportunities of extremely thin SOI (ETSOI) CMOS technology for future low power and general purpose system-on-chip applications
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2010
- VLSI-TSA 2010
A 0.063 μm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch
- Veeraraghvan S. Basker
- Theodorus E. Standaert
- et al.
- 2010
- VLSI Technology 2010
Ultra-thin-body and BOX (UTBB) Fully Depleted (FD) device integration for 22nm node and beyond
- Q. Liu
- A. Yagishita
- et al.
- 2010
- VLSI Technology 2010
Challenges and solutions of extremely thin SOI (ETSOI) for CMOS scaling to 22nm node and beyond
- Kangguo Cheng
- Ali Khakifirooz
- et al.
- 2010
- CSTIC 2010
Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- VLSI Technology 2009