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Superb endurance and appropriate Vth of PCM pillar cell using buffer layer for 3D cross-point memoryN. GangW. Chienet al.2019IMW 2019
High endurance self-heating OTS-PCM pillar cell for 3D stackable memoryC. YehW. Chienet al.2018VLSI Technology 2018
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCMHuai-Yu ChengW. Chienet al.2017IEDM 2017
Greater than 2-bits/cell MLC storage for ultra high density phase change memory using a novel sensing schemeJau-Yi WuWin-San Khwaet al.2015VLSI Technology 2015
A Procedure to Reduce Cell Variation in Phase Change Memory for Improving Multi-Level-Cell PerformancesWin-San KhwaJau-Yi Wuet al.2015IMW 2015
A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applicationsWin-San KhwaJau-Yi Wuet al.2014IEDM 2014
A double-density dual-mode phase change memory using a novel background storage schemeJau-Yi WuM.H. Leeet al.2014VLSI Technology 2014
A scalable volume-confined phase change memory using physical vapor depositionS.C. LaiS. Kimet al.2013VLSI Technology 2013