CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Publications
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158 results for Jean Fompeyrine
Gate dielectrics for high mobility semiconductors
- A. Dimoulas
- Y. Panayiotatos
- et al.
- 2008
- ECS Meeting 2008
Ge p-channel MOSFETS with La2O3 and A1 2O3 Gate dielectrics
- C. Rossel
- A. Dimoulas
- et al.
- 2008
- ESSDERC 2008
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- Yanning Sun
- S.J. Koester
- et al.
- 2007
- CS MANTECH 2007
Current challenges in Ge MOS technology
- A. Dimoulas
- M. Houssa
- et al.
- 2006
- ECS Meeting 2006
High mobility channels for ultimate CMOS
- D.K. Sadana
- S.J. Koester
- et al.
- 2006
- ECS Meeting 2006
Growth of perovskites with crystalline interfaces on Si(100)
- G.J. Norga
- A. Guiller
- et al.
- 2003
- MRS Proceedings 2003
Changes of Tc under epitaxial strain: Implications for the mechanism of superconductivity
- J.P. Locquet
- J. Perret
- et al.
- 1998
- SPIE Optical Science, Engineering, and Instrumentation 1998
Local determination of the terminating layer of SrTiO3
- J. Fompeyrine
- R. Berger
- et al.
- 1998
- SPIE Optical Science, Engineering, and Instrumentation 1998
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights
- Laura Begon-Lours
- Mattia Halter
- et al.
- 2021
- IEEE J-EDS