Publications

158 results for Jean Fompeyrine

Very high- κ ZrO₂ with La₂O₃ (LaGeO_x) passivating interfacial layers on germanium substrates
- - G. Mavrou
  - P. Tsipas
  - et al.
- 2008
- Applied Physics Letters
Gate dielectrics for high mobility semiconductors
- - A. Dimoulas
  - Y. Panayiotatos
  - et al.
- 2008
- ECS Meeting 2008
Ge p-channel MOSFETS with La₂O₃ and A1 ₂O₃ Gate dielectrics
- - C. Rossel
  - A. Dimoulas
  - et al.
- 2008
- ESSDERC 2008
Germanium-induced stabilization of a very high- k zirconia phase in ZrO2 / GeO2 gate stacks
- - P. Tsipas
  - S.N. Volkos
  - et al.
- 2008
- Applied Physics Letters
Antiferromagnetic LaFeO₃ thin films and their effect on exchange bias
- - J.W. Seo
  - E.E. Fullerton
  - et al.
- 2008
- Journal of Physics Condensed Matter
Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
- - J.P. De Souza
  - E.W. Kiewra
  - et al.
- 2008
- Applied Physics Letters
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- - Yanning Sun
  - S.J. Koester
  - et al.
- 2007
- CS MANTECH 2007
Optical properties of epitaxial SrHf O3 thin films grown on Si
- - M. Sousa
  - C. Rossel
  - et al.
- 2007
- Journal of Applied Physics
SrHfO₃ as gate dielectric for future CMOS technology
- - C. Rossel
  - M. Sousa
  - et al.
- 2007
- Microelectronic Engineering
In-situ MBE Si as passivating interlayer on GaAs for HfO₂ MOSCAP's: effect of GaAs surface reconstruction
- - D.J. Webb
  - J. Fompeyrine
  - et al.
- 2007
- Microelectronic Engineering