High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014
Publications
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34 results for Cheng-Wei Cheng
Vertical thinking in blue light emitting diodes: GaN-on-graphene technology
- Can Bayram
- Jeehwan Kim
- et al.
- 2015
- SPIE OPTO 2015
Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)
- Can Bayram
- John A. Ott
- et al.
- 2015
- SPIE OPTO 2015
A four-FET method for extracting mobility in FETs without field oxide
- Amlan Majumdar
- Ko-Tao Lee
- et al.
- 2014
- IEEE T-ED
CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
- Jeehwan Kim
- Can Bayram
- et al.
- 2014
- Nature Communications
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
Cubic phase GaN on nano-grooved Si (100) via maskless selective area epitaxy
- Can Bayram
- John A. Ott
- et al.
- 2014
- Advanced Functional Materials
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices
- Can Bayram
- K.-T. Shiu
- et al.
- 2013
- SPIE OPTO 2013