Tailoring dielectric materials for robust BEOL reliability
- G. Bonilla
- T.M. Shaw
- et al.
- 2012
- IRPS 2012
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66 results for Hosadurga Shobha
In-situ metal/dielectric capping process for electromigration enhancement in Cu interconnects
- Chih-Chao Yang
- Fen Chen
- et al.
- 2012
- IITC 2012
Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)
- F. Ito
- H. Shobha
- et al.
- 2012
- Microelectronic Engineering
Synergistic combinations of dielectrics and metallization process technology to achieve 22 nm interconnect performance targets
- G.A. Antonelli
- G. Jiang
- et al.
- 2012
- Microelectronic Engineering
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
In situ Co/SiC(N,H) capping layers for Cu/Low-k interconnects
- Chih-Chao Yang
- B. Li
- et al.
- 2012
- IEEE Electron Device Letters
Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices
- Son Nguyen
- T. Haigh
- et al.
- 2011
- ECS Meeting 2011
Moisture uptake impact on damage layer of porous low-k film in 80nm-pitched Cu interconnects
- M. Tagami
- Atsushi Ogino
- et al.
- 2011
- ECS Meeting 2011
Optimization of porous ultra low- dielectrics (κ≤ 2.55) for 28nm generation
- D. Kioussis
- E.T. Ryan
- et al.
- 2011
- IITC/MAM 2011
Improvement of RC performance for advanced ULK/Cu interconnects with CVD hybrid dielectric/metal liner
- M. Tagami
- C.-C. Yang
- et al.
- 2011
- IITC/MAM 2011