Electromigration in AlCu lines: Comparison of Dual Damascene and metal reactive ion etching
- R. Filippi
- M. Gribelyuk
- et al.
- 2001
- Thin Solid Films
Paper
Publications
5 results for X.J. Ning
Reactive ion etch of 150 nm Al lines for interconnections in dynamic random access memory
- G. Stojakovic
- X.J. Ning
- 2000
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperAluminum dual damascene metallization for 0.175 μm DRAM generations and beyond
- R.F. Schnabel
- L. Clevenger
- et al.
- 2000
- Microelectronic Engineering
PaperChallenges of Aluminum RIE Technology at sub 0.45 μm Pitches
- R. Ravikumar
- R. Filippi
- et al.
- 1999
- IITC 1999
Conference paperDielectric anti-reflection coating application in a 0.175 μm dual-damascene process
- G.Y. Lee
- Z.G. Lu
- et al.
- 1998
- IITC 1998
Conference paper