Electromigration in AlCu lines: Comparison of Dual Damascene and metal reactive ion etching
- R. Filippi
- M. Gribelyuk
- et al.
- 2001
- Thin Solid Films
Paper
Publications
6 results for R.C. Iggulden
The microstructure of submicrometer wide planar-reactive ion etched versus trench-damascene AlCu lines
- K.P. Rodbell
- L. Gignac
- et al.
- 2000
- Journal of Applied Physics
PaperAluminum dual damascene metallization for 0.175 μm DRAM generations and beyond
- R.F. Schnabel
- L. Clevenger
- et al.
- 2000
- Microelectronic Engineering
PaperChallenges of Aluminum RIE Technology at sub 0.45 μm Pitches
- R. Ravikumar
- R. Filippi
- et al.
- 1999
- IITC 1999
Conference paperCleans for Al vias in a 0.175 μm Dual Damascene Process
- J.P. Gambino
- L. Clevenger
- et al.
- 1999
- IITC 1999
Conference paperLinewidth and underlayer influence on texture in submicrometer-wide Al and AlCu lines
- J.L. Hurd
- K.P. Rodbell
- et al.
- 1998
- Applied Physics Letters
Paper