Electrodes and barriers for dram and feram: Processing, integration, and fundamentals
- K.L. Saenger
- P.C. Andricacos
- et al.
- 2001
- MRS Online Proceedings Library
Conference paper
Publications
10 results for J.D. Baniecki
The effect of forming gas annealing on Pt/(Ba,Sr)TiO3/Pt thin film capacitors for future dram applications: Electrical properties and degradation mechanisms
- J.D. Baniecki
- C. Parks
- et al.
- 2001
- MRS Online Proceedings Library
Conference paperHydrogen induced tunnel emission in Pt/(BaxSr1-x)Ti1+yO3+z/Pt thin film capacitors
- J.D. Baniecki
- R.B. Laibowitz
- et al.
- 2001
- Journal of Applied Physics
PaperLow temperature hydrogen induced degradation of (Ba,Sr)TiO3 thin film capacitors
- J.D. Baniecki
- C. Parks
- et al.
- 1999
- MRS Proceedings 1999
Conference paperThe effect of stress on the dielectric properties of barium strontium titanate thin films
- T.M. Shaw
- Z. Suo
- et al.
- 1999
- Applied Physics Letters
PaperEffects of annealing conditions on charge loss mechanisms in MOCVD Ba0·7Sr0·3TiO3 thin film capacitors
- J.D. Baniecki
- R.B. Laibowitz
- et al.
- 1999
- Journal of the European Ceramic Society
Paper(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM
- D.E. Kotecki
- J.D. Baniecki
- et al.
- 1999
- IBM J. Res. Dev
PaperDielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz
- J.D. Baniecki
- R.B. Laibowitz
- et al.
- 1998
- Applied Physics Letters
PaperCompensation doping of Ba0.7Sr0.3TiO3 thin films
- M. Copel
- J.D. Baniecki
- et al.
- 1998
- Applied Physics Letters
PaperNonlinear dielectric relaxation of Mn doped polycrystalline (Ba,Sr)TiO3 thin films over the temperature range of 4.2 - 473 K
- J.D. Baniecki
- R.B. Laibowitz
- et al.
- 1998
- MRS Fall Meeting 1998
Paper