Publications

8 results for Isaac Lagnado

A 23.8-GHz SOI CMOS tuned amplifier
- - Brian A. Floyd
  - Leathen Shi
  - et al.
- 2002
- IEEE T-MTT
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f_max
- - S.J. Koester
  - R. Hammond
  - et al.
- 2001
- IEEE Electron Device Letters
Low-noise SiGe pMODFETs on sapphire with 116 GHz f_max
- - S.J. Koester
  - R. Hammond
  - et al.
- 2000
- DRC 2000
Silicon-on-sapphire for RF Si systems 2000
- - I. Lagnado
  - P.R. De La Houssaye
  - et al.
- 2000
- SiRF 2000
A 26.5 GHz Silicon MOSFET 2:1 Dynamic Frequency Divider
- - Matt Wetzel
  - Leathen Shi
  - et al.
- 2000
- IEEE Microwave and Guided Wave Letters
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
- - Suraj J. Mathew
  - Guofu Niu
  - et al.
- 1999
- IEEE Electron Device Letters
4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOS technology on SOI, SOS, and bulk substrates
- - Yo-Chuol Ho
  - Ki-Hong Kim
  - et al.
- 1998
- IEEE Journal of Solid-State Circuits
1.0-V and 1.5-V operation of 4-GHz tuned amplifiers implemented in a 0.1-μm CMOS technology on bulk and SOI substrates
- - Yo-Chuol Ho
  - C. Wann
  - et al.
- 1998
- SiRF 1998