A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power mmWave digital and RF circuit capability
- Jean-Olivier Plouchart
- Noah Zamdmer
- et al.
- 2005
- IEEE Transactions on Electron Devices
Publications
3 results for Susan Chaloux
A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability
- Noah Zamdmer
- Jonghae Kim
- et al.
- 2004
- VLSI Technology 2004
Evaluation of X-ray lithography using a 0.175 μm (0.245 μm2 cell area) 1 Gb DRAM technology
- Rosemary Longo
- S. Chaloux
- et al.
- 1998
- VLSI Technology 1998