Publications

12 results for J. Benedict

A 0.127 μm² high performance 65 nm SOI based embedded DRAM for on-processor applications
- - G. Wang
  - K. Cheng
  - et al.
- 2006
- IEDM 2006
65nm CMOS technology for low power applications
- - A. Steegen
  - R. Mo
  - et al.
- 2005
- IEDM 2005
High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors
- - Charles T. Black
  - Kathryn W. Guarini
  - et al.
- 2004
- IEEE Electron Device Letters
High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations
- - M. Yang
  - M. Ieong
  - et al.
- 2003
- IEDM 2003
Issues in NiSi-gated FDSOI device integration
- - Jakub Kedzierski
  - Diane Boyd
  - et al.
- 2003
- IEDM 2003
Two gates are better than one
- - P. Solomon
  - K.W. Guarini
  - et al.
- 2003
- IEEE Circuits and Devices Magazine
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- - Jakub Kedzierski
  - Edward Nowak
  - et al.
- 2002
- IEDM 2002
A 10 nm MOSFET concept
- - J. Appenzeller
  - R. Martel
  - et al.
- 2001
- Microelectronic Engineering
Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors
- - J. Appenzeller
  - R. Martel
  - et al.
- 2000
- Applied Physics Letters
Cleans for Al vias in a 0.175 μm Dual Damascene Process
- - J.P. Gambino
  - L. Clevenger
  - et al.
- 1999
- IITC 1999