Long Term NBTI Relaxation under AC and DC Biased Stress and Recovery
- Elnatan Mataev
- James Stathis
- et al.
- 2019
- IRPS 2019
Conference paper
Publications
12 results for Giuseppe La Rosa
Estimating transistor channel temperature using time-resolved and time-integrated NIR emission
- Franco Stellari
- Alan J. Weger
- et al.
- 2018
- IRPS 2018
Conference paperImpact of 3D copper TSV integration on 32SOI FEOL and BEOL reliability
- Mukta Farooq
- Giuseppe La Rosa
- et al.
- 2015
- IRPS 2015
Conference paperProcess dependence of AC/DC PBTI in HKMG n-MOSFETs
- Wen Liu
- Giuseppe La Rosa
- et al.
- 2014
- IRPS 2014
Conference paperTrade-offs between RF performance and total-dose tolerance in 45-nm RF-CMOS
- Rajan Arora
- En Xia Zhang
- et al.
- 2011
- IEEE TNS
PaperA robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS
- D.P. Ioannou
- K. Zhao
- et al.
- 2011
- IRPS 2011
Conference paperImpact of source/drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETs
- Rajan Arora
- Sachin Seth
- et al.
- 2011
- IRPS 2011
Conference paperImpact of NBTI induced statistical variation to SRAM cell stability
- Giuseppe La Rosa
- Wee Loon Ng
- et al.
- 2006
- IRPS 2006
Conference paperThe energy-driven paradigm of NMOSFET hot-carrier effects
- Stewart E. Rauch Iii
- Giuseppe La Rosa
- 2005
- IEEE T-DMR
Paper1.5-V single work-function W/WN/n+-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM
- Rajesh Rengarajan
- Boyong He
- et al.
- 2002
- IEEE Electron Device Letters
Paper