Influence and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- Microelectronics Reliability
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169 results for Jim Stathis
Reliability of ultra-thin oxides in CMOS circuits
- J.H. Stathis
- B.P. Linder
- et al.
- 2003
- Microelectronics Reliability
Circuit implications of gate oxide breakdown
- J.H. Stathis
- R. Rodríguez
- et al.
- 2003
- Microelectronics Reliability
Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IRPS 2003
Growth and scaling of oxide conduction after breakdown
- Barry P. Linder
- James H. Stathis
- et al.
- 2003
- IRPS 2003
Growth and scaling of oxide conduction after breakdown
- Barry P. Linder
- James H. Stathis
- et al.
- 2003
- IRPS 2003
Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IRPS 2003
Analysis of the effect of the gate oxide breakdown on SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
Dependence of post-breakdown conduction on gate oxide thickness
- S. Lombardo
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
Physical models of ultra thin oxide reliability in CMOS devices and implications for circuit reliability
- 2001
- IWGI 2001