Publications

169 results for Jim Stathis

Degradation of ultra-thin oxides with Tungsten gates under high voltage: Wear-out and breakdown transient
- - F. Palumbo
  - S. Lombardo
  - et al.
- 2004
- IRPS 2004
Degradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient
- - F. Palumbo
  - S. Lombardo
  - et al.
- 2004
- IRPS 2004
Broad energy distribution of NBTI-induced interface states in p-MOSFETs with ultra-thin nitrided oxide
- - J.H. Stathis
  - G. Larosa
  - et al.
- 2004
- IRPS 2004
Reliability of MOS devices with tungsten gates
- - F. Palumbo
  - S. Lombardo
  - et al.
- 2004
- Microelectronic Engineering
Effect and model of gate oxide breakdown on CMOS inverters
- - R. Rodríguez
  - J.H. Stathis
  - et al.
- 2003
- INFOS 2003
Statistics of progressive breakdown in ultra-thin oxides
- - B.P. Linder
  - J.H. Stathis
- 2003
- INFOS 2003
Evaluation of NBTI in HfO₂ Gate-Dielectric Stacks With Tungsten Gates
- - Sufi Zafar
  - Byoung H. Lee
  - et al.
- 2004
- IEEE Electron Device Letters
a-SiGe:H and a-SiGec:H black-matrix films for Liquid Crystal Displays
- - Yoshimine Kato
  - Yoshimasa Kaida
  - et al.
- 2004
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Critical Assessment of Soft Breakdown Stability Time and the Implementation of New Post-Breakdown Methodology for ultra-thin gate oxides
- - E. Wu
  - J. Suñé
  - et al.
- 2003
- IEDM 2003
Oxide breakdown model and its impact on SRAM cell functionality
- - R. Rodríguez
  - R.V. Joshi
  - et al.
- 2003
- SISPAD 2003