Broad energy distribution of NBTI-induced interface states in p-MOSFETs with ultra-thin nitrided oxide
- J.H. Stathis
- G. LaRosa
- et al.
- 2004
- IRPS 2004
Conference paper
Publications
169 results for Jim Stathis
Degradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- IRPS 2004
Conference paperBroad energy distribution of NBTI-induced interface states in p-MOSFETs with ultra-thin nitrided oxide
- J.H. Stathis
- G. Larosa
- et al.
- 2004
- IRPS 2004
Conference paperReliability of MOS devices with tungsten gates
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- Microelectronic Engineering
PaperEffect and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- INFOS 2003
Conference paperStatistics of progressive breakdown in ultra-thin oxides
- B.P. Linder
- J.H. Stathis
- 2003
- INFOS 2003
Conference paperEvaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates
- Sufi Zafar
- Byoung H. Lee
- et al.
- 2004
- IEEE Electron Device Letters
Papera-SiGe:H and a-SiGec:H black-matrix films for Liquid Crystal Displays
- Yoshimine Kato
- Yoshimasa Kaida
- et al.
- 2004
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
PaperCritical Assessment of Soft Breakdown Stability Time and the Implementation of New Post-Breakdown Methodology for ultra-thin gate oxides
- E. Wu
- J. Suñé
- et al.
- 2003
- IEDM 2003
Conference paperOxide breakdown model and its impact on SRAM cell functionality
- R. Rodríguez
- R.V. Joshi
- et al.
- 2003
- SISPAD 2003
Conference paper