Conductance measurements on Pb centers at the (111) Si:SiO2 interface
- M.J. Uren
- J.H. Stathis
- et al.
- 1996
- Journal of Applied Physics
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169 results for Jim Stathis
Hot-electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface
- E. Cartier
- J.H. Stathis
- 1996
- Applied Physics Letters
Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2
- 1995
- Applied Physics Letters
Interface states induced by the presence of trapped holes near the silicon-silicon-dioxide interface
- D.J. DiMaria
- D.A. Buchanan
- et al.
- 1995
- Journal of Applied Physics
Dissociation kinetics of hydrogen-passivated (100) Si/SiO2 interface defects
- 1995
- Journal of Applied Physics
Dissociation kinetics of hydrogen-passivated (100) Si SiO2 interface defects
- 1995
- Microelectronic Engineering
Atomic hydrogen-induced degradation of thin SiO2 gate oxides
- E. Cartier
- D.A. Buchanan
- et al.
- 1995
- Journal of Non-Crystalline Solids
Atomic hydrogen-induced degradation of the Si SiO2 structure
- E. Cartier
- J.H. Stathis
- 1995
- Microelectronic Engineering
Passivation and depassivation of silicon dangling bonds at the Si/SiO 2 interface by atomic hydrogen
- E. Cartier
- J.H. Stathis
- et al.
- 1993
- Applied Physics Letters
Interface defects of ultrathin rapid-thermal oxide on silicon
- J.H. Stathis
- D.A. Buchanan
- et al.
- 1993
- Applied Physics Letters