Oxide scaling limit for future logic and memory technology
- J.H. Stathis
- D.J. DiMaria
- 1999
- Microelectronic Engineering
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169 results for Jim Stathis
Physical model and results of numerical simulation of the degradation of a Si/SiO2 structure as a result of annealing in vacuum
- G.V. Gadiyak
- J.H. Stathis
- 1998
- Semiconductors
Interface state capture cross section measurements on vacuum annealed and radiation damaged Si:SiO2 surfaces
- M.J. Uren
- V. Nayar
- et al.
- 1998
- JES
Ultimate limit for defect generation in ultra-thin silicon dioxide
- D.J. DiMaria
- J.H. Stathis
- 1997
- Applied Physics Letters
Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
- D.J. DiMaria
- J.H. Stathis
- 1997
- Applied Physics Letters
Potential fluctuations due to Pb centres at the Si/SiO2 interface
- M.J. Uren
- K.M. Brunson
- et al.
- 1997
- Microelectronic Engineering
On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics
- D.A. Buchanan
- J.H. Stathis
- et al.
- 1997
- Microelectronic Engineering
Quantitative model of the thickness dependence of breakdown in ultra-thin oxides
- 1997
- Microelectronic Engineering
Control and modification of nematic liquid crystal pretilt angles on polyimides
- Kang-Wook Lee
- Alan Lien
- et al.
- 1997
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2
- 1996
- Applied Physics Letters