Percolation models for gate oxide breakdown
- 1999
- Journal of Applied Physics
Paper
Publications
169 results for Jim Stathis
Defects in thermal oxide studied by photoluminescence spectroscopy
- Hiroyuki Nishikawa
- James H. Stathis
- et al.
- 1999
- Applied Physics Letters
PaperHydrogen electrochemistry and stress-induced leakage current in silica
- Peter E. Blöchl
- James H. Stathis
- 1999
- Physical Review Letters
PaperNon-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
- D.J. DiMaria
- J.H. Stathis
- 1999
- Applied Physics Letters
PaperOxide scaling limit for future logic and memory technology
- J.H. Stathis
- D.J. DiMaria
- 1999
- Microelectronic Engineering
PaperReliability projection for ultra-thin oxides at low voltage
- J.H. Stathis
- D.J. DiMaria
- 1998
- IEDM 1998
Conference paperInterface state capture cross section measurements on vacuum annealed and radiation damaged Si:SiO2 surfaces
- M.J. Uren
- V. Nayar
- et al.
- 1998
- JES
PaperPhysical model and results of numerical simulation of the degradation of a Si/SiO2 structure as a result of annealing in vacuum
- G.V. Gadiyak
- J.H. Stathis
- 1998
- Semiconductors
PaperUltimate limit for defect generation in ultra-thin silicon dioxide
- D.J. DiMaria
- J.H. Stathis
- 1997
- Applied Physics Letters
PaperExplanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
- D.J. DiMaria
- J.H. Stathis
- 1997
- Applied Physics Letters
Paper