Reliability limits for the gate insulator in CMOS technology
- 2002
- IBM J. Res. Dev
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169 results for Jim Stathis
Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits
- 2001
- IEEE T-DMR
Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films
- D.J. DiMaria
- J.H. Stathis
- 2001
- Journal of Applied Physics
Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density
- S. Lombardo
- F. Crupi
- et al.
- 2001
- Annual Proceedings - Reliability Physics (Symposium)
Ultra-thin oxide reliability for ULSI applications
- Ernest Y. Wu
- James H. Stathis
- et al.
- 2000
- Semiconductor Science and Technology
Gate oxide breakdown under Current Limited Constant Voltage Stress
- B.P. Linder
- J.H. Stathis
- et al.
- 2000
- Digest of Technical Papers-Symposium on VLSI Technology
Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs
- Peter E. Blöchl
- James H. Stathis
- 1999
- Physica B: Condensed Matter
Percolation models for gate oxide breakdown
- 1999
- Journal of Applied Physics
Defects in thermal oxide studied by photoluminescence spectroscopy
- Hiroyuki Nishikawa
- James H. Stathis
- et al.
- 1999
- Applied Physics Letters
Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
- D.J. DiMaria
- J.H. Stathis
- 1999
- Applied Physics Letters