Publications

14 results for Choonghyun Lee

SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- - Richard G. Southwick
  - Miaomiao Wang
  - et al.
- 2019
- VLSI Technology 2019
Channel Strain Dependence of Tinv in Strained Si and Si_l-xGe_xFETs: Internal Strain-induced Modification of Chemical Oxidation
- - Choonghyun Lee
  - Shogo Mochizuki
  - et al.
- 2019
- VLSI Technology 2019
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2018
- IEDM 2018
Differentiated performance and reliability enabled by multi-work function solution in RMG Silicon and SiGe MOSFETs
- - Ruqiang Bao
  - Richard G. Southwick
  - et al.
- 2018
- VLSI Technology 2018
Advanced replacement high-K/metal gate stack engineering for high-performance strained silicon-germanium FinFETs with high Ge content
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2018
- AiMES - ECS - SMEQ 2018
A comparative study of strain and Ge content in Si_1-xGe_x channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- - Choonghyun Lee
  - Shogo Mochizuki
  - et al.
- 2017
- IEDM 2017
High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2017
- IEDM 2017
Understanding the interfacial layer formation on strained Si_1-xGe_x channels and their correlation to inversion layer hole mobility
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2017
- VLSI Technology 2017
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2017
- VLSI Technology 2017
Interface engineering of Si_1-xGe_x gate stacks for high performance dual channel CMOS
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2017
- ASICON 2017