Towards schottky-barrier source/drain MOSFETs
- Mikael Östling
- Valur Gudmundsson
- et al.
- 2008
- ICSICT 2008
Conference paper
Publications
13 results for Shi-Li Zhang
Threshold voltage variation in SOI Schottky-barrier MOSFETs
- Min Zhang
- Joachim Knoch
- et al.
- 2008
- IEEE Transactions on Electron Devices
PaperHigh conductivity copper-boron alloys obtained by low temperature annealing
- S.-L. Zhang
- J.M.E. Harper
- et al.
- 2001
- Journal of Electronic Materials
PaperOn reactive diffusion: 1 Kinetics, growth and diffusion, 2 equilibrium?
- F.M. D'Heurle
- P. Gas
- et al.
- 2001
- Defect and Diffusion Forum
PaperComment on "Dominant diffusing species during cobalt suicide formation" [J. Appl. Phys. 79, 153 (1996)]
- F.M. D'Heurle
- S.-L. Zhang
- 2000
- Journal of Applied Physics
PaperInfluence of molybdenum on the formation of C54TiSi2: Template phenomenon versus grain-size effect
- S.-L. Zhang
- F.M. D'Heurle
- 2000
- Applied Physics Letters
PaperPhase formation and resistivity in the ternary system Ti-Nb-Si
- Aliette Mouroux
- Marylène Roux
- et al.
- 1999
- Journal of Applied Physics
PaperIn situ characterization of titanium silicide formation: The effect of Mo interlayer, temperature ramp-rate, and annealing atmosphere
- S.-L. Zhang
- C. Lavoie
- et al.
- 1999
- Journal of Applied Physics
PaperBoron in polycrystalline SixGe1-x films: Phase diagram and solid solubility
- D. Mangelinck
- P.-E. Hellberg
- et al.
- 1998
- JES
PaperOxidation of silicon-germanium alloys. I. An experimental study
- P.-E. Hellberg
- S.-L. Zhang
- et al.
- 1997
- Journal of Applied Physics
Paper