Publications

22 results for X. Miao

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
- - J. Zhang
  - S. Pancharatnam
  - et al.
- 2019
- IEDM 2019
A Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet Devices
- - Nicolas Loubet
  - T. Devarajan
  - et al.
- 2019
- IEDM 2019
Channel Strain Dependence of Tinv in Strained Si and Si_l-xGe_xFETs: Internal Strain-induced Modification of Chemical Oxidation
- - Choonghyun Lee
  - Shogo Mochizuki
  - et al.
- 2019
- VLSI Technology 2019
Direct Partition Measurement of Parasitic Resistance Components in Advanced Transistor Architectures
- - Zuoguang Liu
  - Heng Wu
  - et al.
- 2019
- VLSI Technology 2019
SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- - Richard G. Southwick
  - Miaomiao Wang
  - et al.
- 2019
- VLSI Technology 2019
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
- - Miaomiao Wang
  - Jingyun Zhang
  - et al.
- 2019
- IRPS 2019
Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology
- - Ruqiang Bao
  - Steven Hung
  - et al.
- 2018
- IEDM 2018
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2018
- IEDM 2018
Technique for Asymmetric Source/Drain Resistance Extraction on a Single Gate Length MOSFET
- - Phil Oldiges
  - Chen Zhang
  - et al.
- 2018
- SISPAD 2018
FinFET external resistance analysis by extended shift-and-ratio method
- - Chen Zhang
  - Zuoguang Liu
  - et al.
- 2018
- IEEE T-ED