Publications

62 results for W. Riess

Comparison of VLS grown Si NW tunnel FETs with different gate stacks
- - K. Moselund
  - H. Ghoneim
  - et al.
- 2009
- ESSDERC 2009
Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
- - H. Ghoneim
  - J. Knoch
  - et al.
- 2009
- Applied Physics Letters
Mapping active dopants in single silicon nanowires using off-axis electron holography
- - Martien I. Den Hertog
  - Heinz Schmid
  - et al.
- 2009
- Nano Letters
Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs
- - H. Ghoneim
  - J. Knoch
  - et al.
- 2009
- ULIS 2009
Lateral strain profile as key technology booster for all-silicon tunnel FETs
- - Kathy Boucart
  - Adrian Mihai Ionescu
  - et al.
- 2009
- IEEE Electron Device Letters
Donor deactivation in silicon nanostructures
- - Mikael T. Björk
  - Heinz Schmid
  - et al.
- 2009
- Nature Nanotechnology
Doping limits of grown in situ doped silicon nanowires using phosphine
- - Heinz Schmid
  - Mikael T. Björk
  - et al.
- 2009
- Nano Letters
Toward nanowire electronics
- - Joerg Appenzeller
  - Joachim Knoch
  - et al.
- 2008
- IEEE T-ED
Silicon nanowire tunneling field-effect transistors
- - M.T. Björk
  - J. Knoch
  - et al.
- 2008
- Applied Physics Letters
Outperforming the conventional scaling rules in the quantum-capacitance limit
- - J. Knoch
  - W. Riess
  - et al.
- 2008
- IEEE Electron Device Letters