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Extending dual stress liner process to high performance 32nm node SOI CMOS manufacturingM. CaiB. Greeneet al.2008IEEE International SOI Conference 2008
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressorB. YangR. Takalkaret al.2008IEDM 2008
Recent progress and challenges in enabling embedded Si:C technologyB. YangZ. Renet al.2008ECS Meeting 2008
RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technologyI. AhsanN. Zamdmeret al.2006VLSI Technology 2006
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cellE. LeobandungH. Nayakamaet al.2005VLSI Technology 2005
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOLW.-H. LeeA. Waiteet al.2005IEDM 2005
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)J. CaiK. Rimet al.2004IEDM 2004
Retardation of arsenic diffusion in silicon-germanium by co-implantationOmer DokumaciPaul Ronsheimet al.2004ECS Meeting 2004