Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETsK.-L. LeeM.M. Franket al.2006VLSI Technology 2006
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyondV. NarayananV.K. Paruchuriet al.2006VLSI Technology 2006
A comparison of electrical and physical properties of MOCVD hafnium silicate thin films deposited using various silicon precursorsP. JamisonM. Copelet al.2006MRS Spring Meeting 2006
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodesR. JammyV. Narayananet al.2005ISTC 2005
High performance FDSOI CMOS technology with metal gate and high-kBruce DorisY.-H. Kimet al.2005VLSI Technology 2005
HfO 2/metal stacks: Determination of energy level diagram, work functions & their dependence on metal depositionS. ZafarV. Narayananet al.2005VLSI Technology 2005
Role of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2E. CartierF.R. McFeelyet al.2005VLSI Technology 2005
Electron mobility dependence of W/HFO 2 gate stacks on interfacial layer preparationA.C. CallegariP. Jamisonet al.2005ECS Meeting 2005
Systematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacksY.-H. KimC. Cabral Jr.et al.2005IEDM 2005